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IS64WV1024BLL-12BA3 PDF预览

IS64WV1024BLL-12BA3

更新时间： 2024-11-24 19:45:47
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
16页 211K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 8 X 6 MM, MO-207, TFBGA-48

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IS64WV1024BLL-12BA3 技术参数

生命周期：Active包装说明：TFBGA,
Reach Compliance Code：unknownECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.8
最长访问时间：12 nsJESD-30 代码：R-PBGA-B48
长度：8 mm内存密度：1048576 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：48
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM宽度：6 mm
Base Number Matches：1

IS64WV1024BLL-12BA3 数据手册

 浏览型号IS64WV1024BLL-12BA3的Datasheet PDF文件第2页浏览型号IS64WV1024BLL-12BA3的Datasheet PDF文件第3页浏览型号IS64WV1024BLL-12BA3的Datasheet PDF文件第4页浏览型号IS64WV1024BLL-12BA3的Datasheet PDF文件第5页浏览型号IS64WV1024BLL-12BA3的Datasheet PDF文件第6页浏览型号IS64WV1024BLL-12BA3的Datasheet PDF文件第7页 
IS63WV1024BLL  
IS64WV1024BLL  
128K x 8 HIGH-SPEED CMOS STATIC RAM  
JANUARY 2010  
FEATURES  
DESCRIPTION  
• High-speed access time:  
12 ns: 3.3V + 10%  
The ISSI IS63/64WV1024BLL is a very high-speed, low  
power, 131,072-word by 8-bit CMOS static RAM. The  
IS63/64WV1024BLL is fabricated using ISSI's  
high-performanceCMOStechnology. Thishighlyreliable  
process coupled with innovative circuit design  
techniques, yields higher performance and low power  
consumption devices.  
15 ns: 2.5V – 3.6V  
• High-performance, low-power CMOS process  
• CMOS Low Power Operation  
50 mW (typical) operating current  
25 µW (typical) standby current  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 25 µW (typical) with CMOS input levels.  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE options  
• CE power-down  
The IS63/64WV1024BLL operates from a single VDD  
power supply. The IS63/64WV1024BLL is available in  
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball  
miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)  
packages.  
• Fully static operation: no clock or refresh  
required  
• TTL compatible inputs and outputs  
• Packages available:  
– 32-pin TSOP (Type II)  
– 32-pin sTSOP (Type I)  
– 48-Ball miniBGA (6mm x 8mm)  
– 32-pin 300-mil SOJ  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
128K X 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. C  
12/03/09  
1234567...16

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与IS64WV1024BLL-12BA3相关器件

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IS64WV1024BLL-12BLA3 ISSI

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 		Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 8 X 6 MM, LEAD FREE, MO-207, TFBGA-48
IS64WV1024BLL-12HA3 ISSI

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 		Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 13.4 X 8 MM, MO-183, TSOP1-32
IS64WV1024BLL-15BA3 ISSI

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 		128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-15BLA3 ISSI

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 		128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-15HA3 ISSI

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 		128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-15HLA3 ISSI

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 		128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-15TA3 ISSI

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 		128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-15TLA3 ISSI

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 		128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL ISSI

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 		128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL-15BA3 ISSI

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 		128K x 16 HIGH-SPEED CMOS STATIC RAM

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