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IS64WV102416BLL-10MA3-TR

更新时间： 2024-11-20 13:02:23

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路静态存储器
页数	文件大小	规格书
21页	123K
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IS61WV102416ALL

IS61WV102416BLL

IS64WV102416BLL

ISSI

1M x 16 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

APRIL2006

FEATURES

• High-speed access times:

8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater

noise immunity

DESCRIPTION

TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL

are high-speed, 16M-bit static RAMs organized as 1024K

words by 16 bits. It is fabricated using ISSI's high-perform-

anceCMOStechnology.Thishighlyreliableprocesscoupled

withinnovativecircuitdesigntechniques,yieldshigh-perfor-

mance and low power consumption devices.

• Easy memory expansion with CE and OE op-

tions

• CE power-down

• Fully static operation: no clock or refresh

required

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• TTL compatible inputs and outputs

• Single power supply

V^DD1.65V to 2.2V (IS61WV102416ALL)

speed = 20ns for V^DD1.65V to 2.2V

V^DD2.4V to 3.6V (IS61/64WV102416BLL)

speed = 10ns for V^DD2.4V to 3.6V

speed = 8ns for V^DD3.3V + 5%

• Packages available:

The device is packaged in the JEDEC standard 48-pin

TSOP Type I and 48-pin Mini BGA (9mm x 11mm).

–

48-ball miniBGA (9mm x 11mm)

– 48-pin TSOP (Type I)

• Industrial and Automotive Temperature Support

• Lead-free available

• Data control for upper and lower bytes

FUNCTIONAL BLOCK DIAGRAM

1024K x 16

MEMORY ARRAY

A0-A19

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

02/13/06

12 3 4 5 6 7...21

中文翻译

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与IS64WV102416BLL-10MA3-TR相关器件

型号	品牌	获取价格	描述	数据表
IS64WV102416BLL-10MLA3	ISSI	获取价格	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV102416BLL-10MLA3-TR	ISSI	获取价格	SRAM
IS64WV102416BLL-10TA3	ISSI	获取价格	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV10248BLL	ISSI	获取价格	1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10CTLA3	ISSI	获取价格	1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10MA3	ISSI	获取价格	1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10TA3	ISSI	获取价格	1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248EDBLL-10CTLA3	ISSI	获取价格	Standard SRAM, 1MX8, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS64WV1024BLL	ISSI	获取价格	128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-12BA3	ISSI	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 8 X 6 MM, MO-207, TFBGA-48

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