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IS42RM16160D-10BL

更新时间： 2024-02-24 05:20:53
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
25页 459K
描述
Synchronous DRAM, 16MX16, 8ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207, TFBGA-54

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IS42RM16160D-10BL 数据手册

 浏览型号IS42RM16160D-10BL的Datasheet PDF文件第2页浏览型号IS42RM16160D-10BL的Datasheet PDF文件第3页浏览型号IS42RM16160D-10BL的Datasheet PDF文件第4页浏览型号IS42RM16160D-10BL的Datasheet PDF文件第5页浏览型号IS42RM16160D-10BL的Datasheet PDF文件第6页浏览型号IS42RM16160D-10BL的Datasheet PDF文件第7页 
IS42SM83200D / IS42SM16160D / IS42SM32800D  
IS42RM83200D / IS42RM16160D / IS42RM32800D  
32Mx8, 16Mx16, 8Mx32  
256Mb Mobile Synchronous DRAM  
Preliminary Information  
JULY 2009  
DESCRIPTION  
FEATURES  
ISSI's 256Mb Mobile Synchronous DRAM achieves high-  
speed data transfer using pipeline architecture. All input  
and output signals refer to the rising edge of the clock  
input. Both write and read accesses to the SDRAM are  
burst oriented. The 256Mb Mobile Synchronous DRAM  
is designed to minimize current consumption making it  
ideal for low-power applications. Both TSOP and BGA  
packages are offered, including industrial grade products.  
•ꢀ Fully synchronous; all signals referenced to a  
positive clock edge  
•ꢀ Internal bank for hiding row access and pre-  
charge  
•ꢀ Programmable CAS latency: 2, 3  
•ꢀ Programmable Burst Length: 1, 2, 4, 8, and Full  
Page  
•ꢀ Programmable Burst Sequence:  
•ꢀ Sequential and Interleave  
•ꢀ Auto Refresh (CBR)  
KEY TIMING PARAMETERS  
Parameter  
-71  
-752  
-10  
Unit  
•ꢀ TCSR (Temperature Compensated Self Refresh)  
CLK Cycle Time  
CAS Latency = 3  
CAS Latency = 2  
CLK Frequency  
CAS Latency = 3  
CAS Latency = 2  
Access Time from CLK  
CAS Latency = 3  
CAS Latency = 2  
•ꢀ PASR (Partial Arrays Self Refresh): 1/16, 1/8,  
1/4, 1/2, and Full  
•ꢀ Deep Power Down Mode (DPD)  
7
7.5  
9.6  
10  
12  
ns  
ns  
9.6  
•ꢀ Driver Strength Control (DS): 1/4, 1/2, and Full  
143  
104  
133  
104  
100  
83  
Mhz  
Mhz  
OPTIONS  
•ꢀ Configurations:  
- 32M x 8  
5.4  
8
5.4  
8
8
9
ns  
ns  
- 16M x 16  
- 8M x 32  
•ꢀ Power Supply  
1. Available for x8/x16 only  
2. Available for x32 only  
IS42SMxxx – Vd d /Vd d q = 3.3 V  
IS42RMxxx – Vd d /Vd d q = 2.5 V  
•ꢀ Packages:  
x8 / x16 –TSOP II (54), BGA (54) [x16 only]  
x32 – TSOP II (86), BGA (90)  
•ꢀ Temperature Range:  
Commercial (0°C to +70°C)  
Industrial (–40 ºC to 85 ºC)  
•ꢀ Die Revision: D  
ADDRESSING TABLE  
Parameter  
32M x 8  
8M x 8 x 4 banks  
8K/64ms  
A0-A12  
16M x 16  
8M x 32  
Configuration  
4M x 16 x 4 banks  
8K/64ms  
A0-A12  
2M x 32 x 4 banks  
4K/64ms  
A0-A11  
Refresh Count  
Row Addressing  
Column Addressing  
Bank Addressing  
Precharge Addressing  
A0-A9  
A0-A8  
A0-A8  
BA0, BA1  
A10  
BA0, BA1  
A10  
BA0, BA1  
A10  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. - www.issi.com  
Rev. 00C  
1
07/01/09  
1234567...25

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与IS42RM16160D-10BL相关器件

型号 品牌 获取价格 描述 数据表
IS42RM16160D-10BLI ISSI

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 		Synchronous DRAM, 16MX16, 8ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207,
IS42RM16160D-10TL ISSI

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 		Synchronous DRAM, 16MX16, 8ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16160D-10TLI ISSI

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 		Synchronous DRAM, 16MX16, 8ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16160D-7BLI ISSI

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 		Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207
IS42RM16160D-7TLI ISSI

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 		Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16160E-6BLI ISSI

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 		Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16160K-6BLI ISSI

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 		Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54
IS42RM16160K-75BLI ISSI

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 		Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, FBGA-54
IS42RM16200D-6BLI ISSI

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 		1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42RM16200D-75BLI ISSI

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 		1M x 16Bits x 2Banks Low Power Synchronous DRAM

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