Datasheet > IS42RM16800G-75BLI-TR

IS42RM16800G-75BLI-TR

更新时间： 2024-11-24 22:58:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
33页	464K
描述
IC DRAM 128M PARALLEL 54TFBGA

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IS42/45SM/RM/VM16800G

2M x 16Bits x 4Banks Mobile Synchronous DRAM

Description

These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features

. JEDEC standard 3.3V, 2.5V, 1.8V power supply

• Auto refresh and self refresh

• Internal 4 banks operation

• Burst Read Single Write operation

• Special Function Support

• All pins are compatible with LVCMOS interface

• 4K refresh cycle / 64ms

• PASR(Partial Array Self Refresh)

• Programmable Burst Length and Burst Type

• 1, 2, 4, 8 or Full Page for Sequential Burst

• 4 or 8 for Interleave Burst

• Auto TCSR(Temperature Compensated Self Refresh)

• Programmable Driver Strength Control

• Full Strength or 1/2, 1/4, 1/8 of Full Strength

• Deep Power Down Mode

• Programmable CAS Latency : 2,3 clocks

• All inputs and outputs referenced to the positive edge of the

system clock

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge

• Data mask function by DQM

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - DRAM@issi.com

Rev. A | Apr. 2012

12 3 4 5 6 7...33

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IS42RM16800G-75BLI-TR 替代型号

型号	品牌	替代类型	描述	数据表
IS42RM16800H-75BLI-TR	ISSI	功能相似	IC DRAM 128M PARALLEL 54TFBGA

与IS42RM16800G-75BLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42RM16800H-6BLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16800H-6BLI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 54TFBGA
IS42RM16800H-75BI	ISSI	获取价格	2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16800H-75BLI	ISSI	获取价格	2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16800H-75BLI-TR	ISSI	获取价格	IC DRAM 128M PARALLEL 54TFBGA
IS42RM32100C-75BLI	ISSI	获取价格	Synchronous DRAM, 1MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, TFBGA-90
IS42RM32100D-6BLI	ISSI	获取价格	Synchronous DRAM, 1MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42RM32100D-75BLI	ISSI	获取价格	Synchronous DRAM, 1MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42RM32160C-75BLI-TR	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90
IS42RM32160E-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90

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