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IS42RM16800E-7BI

更新时间： 2023-02-26 14:03:03
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
25页 370K
描述
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, TFBGA-54

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IS42RM16800E-7BI 数据手册

 浏览型号IS42RM16800E-7BI的Datasheet PDF文件第2页浏览型号IS42RM16800E-7BI的Datasheet PDF文件第3页浏览型号IS42RM16800E-7BI的Datasheet PDF文件第4页浏览型号IS42RM16800E-7BI的Datasheet PDF文件第5页浏览型号IS42RM16800E-7BI的Datasheet PDF文件第6页浏览型号IS42RM16800E-7BI的Datasheet PDF文件第7页 
IS42SM81600E / IS42SM16800E / IS42SM32400E  
IS42RM81600E / IS42RM16800E / IS42RM32400E  
16Mx8, 8Mx16, 4Mx32  
128Mb Mobile Synchronous DRAM  
APRIL 2011  
DESCRIPTION  
FEATURES  
ISSI'sꢀ128MbꢀMobileꢀSynchronousꢀDRAMꢀachievesꢀhigh-  
speedꢀdataꢀtransferꢀusingꢀpipelineꢀarchitecture.ꢀAllꢀinputꢀ  
andꢀoutputꢀsignalsꢀreferꢀtoꢀtheꢀrisingꢀedgeꢀofꢀtheꢀclockꢀ  
input.ꢀBothꢀwriteꢀandꢀreadꢀaccessesꢀtoꢀtheꢀSDRAMꢀareꢀ  
burstꢀoriented.ꢀTheꢀ128MbꢀMobileꢀSynchronousꢀDRAMꢀ  
isꢀdesignedꢀtoꢀminimizeꢀcurrentꢀconsumptionꢀmakingꢀitꢀ  
idealꢀforꢀlow-powerꢀapplications.ꢀꢀꢀBothꢀTSOPꢀandꢀBGAꢀ  
packagesꢀareꢀoffered,ꢀincludingꢀindustrialꢀgradeꢀproducts.  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀpositiveꢀ  
clockꢀedge  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccessꢀandꢀprecharge  
•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ3  
•ꢀ ProgrammableꢀBurstꢀLength:ꢀ1,ꢀ2,ꢀ4,ꢀ8,ꢀandꢀFullꢀPage  
•ꢀ ProgrammableꢀBurstꢀSequence:  
•ꢀ SequentialꢀandꢀInterleave  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ TCSRꢀ(TemperatureꢀCompensatedꢀSelfꢀRefresh)ꢀ  
KEY TIMING PARAMETERS  
•ꢀ PASRꢀ(PartialꢀArraysꢀSelfꢀRefresh):ꢀ1/16,ꢀ1/8,ꢀ1/4,ꢀ1/2,ꢀ  
andꢀFullꢀ  
Parameter  
-6  
-7  
-75E  
Unit  
CLKꢀCycleꢀTime  
CASꢀLatencyꢀ=ꢀ3  
CASꢀLatencyꢀ=ꢀ2  
CLKꢀFrequency  
CASꢀLatencyꢀ=ꢀ3  
CASꢀLatencyꢀ=ꢀ2  
AccessꢀTimeꢀfromꢀCLK  
CASꢀLatencyꢀ=ꢀ3  
CASꢀLatencyꢀ=ꢀ2  
•ꢀ DeepꢀPowerꢀDownꢀModeꢀ(DPD)  
6
7
ns  
ns  
–
•ꢀ DriverꢀStrengthꢀControlꢀ(DS):ꢀ1/4,ꢀ1/2,ꢀandꢀFull  
10  
10  
7.5  
OPTIONS  
•ꢀ Configurations:ꢀ  
-ꢀ16Mꢀxꢀ8ꢀꢀ  
166  
100  
143  
100  
Mhz  
Mhz  
–
133  
-ꢀ8Mꢀxꢀ16ꢀ  
-ꢀ4Mꢀxꢀ32ꢀꢀ  
5.4  
8
5.4  
8
ns  
ns  
–
•ꢀ PowerꢀSupplyꢀꢀ  
5.4  
IS42SMxxxꢀ–ꢀVdd/Vddqꢀ=ꢀ3.3ꢀVꢀ  
IS42RMxxxꢀ –ꢀVdd/Vddqꢀ=ꢀ2.5ꢀVꢀ  
•ꢀ Packages:ꢀ  
x8ꢀ/ꢀx16ꢀ–TSOPꢀIIꢀ(54),ꢀBGAꢀ(54)ꢀ[x16ꢀonly]ꢀ  
x32ꢀ–ꢀTSOPꢀIIꢀ(86),ꢀꢀBGAꢀ(90)  
•ꢀ TemperatureꢀRange:ꢀꢀ  
Commercialꢀ(0°Cꢀtoꢀ+70°C)ꢀꢀ  
Industrialꢀ(–40ꢀºCꢀtoꢀ85ꢀºC)  
ADDRESSING TABLE  
Parameter  
16M x 8  
4Mꢀxꢀ8ꢀxꢀ4ꢀbanks  
4K/64ms  
A0-A11  
8M x 16  
2Mꢀxꢀ16ꢀxꢀ4ꢀbanks  
4K/64ms  
A0-A11  
4M x 32  
Configuration  
1Mꢀxꢀ32ꢀxꢀ4ꢀbanks  
4K/64ms  
A0-A11  
RefreshꢀCount  
RowꢀꢀAddressing  
ColumnꢀAddressing  
BankꢀAddressing  
PrechargeꢀAddressing  
A0-A9  
A0-A8  
A0-A7  
BA0,ꢀBA1  
A10  
BA0,ꢀBA1  
A10  
BA0,ꢀBA1  
A10  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀnotice.ꢀꢀꢀISSIꢀassumesꢀnoꢀ  
liabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlatestꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀ  
anyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreasonablyꢀbeꢀex-  
pectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀunlessꢀIntegratedꢀSiliconꢀ  
Solution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances  
Integrated Silicon Solution, Inc. - www.issi.comꢀ  
1
Rev. B  
04/15/2011  
1234567...25

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与IS42RM16800E-7BI相关器件

型号 品牌 获取价格 描述 数据表
IS42RM16800E-7TL ISSI

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 		Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800E-7TLI ISSI

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 		Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800F-6BLE ISSI

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 		Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, LEAD FREE, FBGA-54
IS42RM16800G-6BLI ISSI

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 		2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16800G-75BI ISSI

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 		2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16800G-75BLI ISSI

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 		Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16800G-75BLI-TR ISSI

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 		IC DRAM 128M PARALLEL 54TFBGA
IS42RM16800H-6BLI ISSI

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 		Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16800H-6BLI-TR ISSI

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 		IC DRAM 128M PARALLEL 54TFBGA
IS42RM16800H-75BI ISSI

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 		2M x 16Bits x 4Banks Mobile Synchronous DRAM

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