生命周期: | Active | 包装说明: | TFBGA, |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.66 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 6 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | S-PBGA-B54 | 长度: | 8 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 8MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42RM16800H-75BLI | ISSI |
获取价格 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM |
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IS42RM16800H-75BLI-TR | ISSI |
获取价格 |
IC DRAM 128M PARALLEL 54TFBGA |
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IS42RM32100C-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 1MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, TFBGA-90 |
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IS42RM32100D-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 1MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32100D-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 1MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32160C-75BLI-TR | ISSI |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90 |
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IS42RM32160E-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32200K-6BLI | ISSI |
获取价格 |
512K x 32Bits x 4Banks Mobile Synchronous DRAM |
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IS42RM32200K-75BLI | ISSI |
获取价格 |
512K x 32Bits x 4Banks Mobile Synchronous DRAM |
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IS42RM32200M-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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