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IS42RM32400G-75BLI PDF预览

IS42RM32400G-75BLI

更新时间： 2024-11-20 22:58:07
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
33页 539K
描述
IC DRAM 128M PARALLEL 90TFBGA

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IS42RM32400G-75BLI 数据手册

 浏览型号IS42RM32400G-75BLI的Datasheet PDF文件第2页浏览型号IS42RM32400G-75BLI的Datasheet PDF文件第3页浏览型号IS42RM32400G-75BLI的Datasheet PDF文件第4页浏览型号IS42RM32400G-75BLI的Datasheet PDF文件第5页浏览型号IS42RM32400G-75BLI的Datasheet PDF文件第6页浏览型号IS42RM32400G-75BLI的Datasheet PDF文件第7页 
IS42/45SM/RM/VM32400G  
1M x 32Bits x 4Banks Mobile Synchronous DRAM  
Description  
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32  
bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs  
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input  
and output voltage levels are compatible with LVCMOS.  
Features  
. JEDEC standard 3.3V, 2.5V, 1.8V power supply  
• Auto refresh and self refresh  
• Internal 4 banks operation  
• Burst Read Single Write operation  
• Special Function Support  
• All pins are compatible with LVCMOS interface  
• 4K refresh cycle / 64ms  
• PASR(Partial Array Self Refresh)  
• Programmable Burst Length and Burst Type  
• 1, 2, 4, 8 or Full Page for Sequential Burst  
• 4 or 8 for Interleave Burst  
• Auto TCSR(Temperature Compensated Self Refresh)  
• Programmable Driver Strength Control  
• Full Strength or 1/2, 1/4, 1/8 of Full Strength  
• Deep Power Down Mode  
• Programmable CAS Latency : 2,3 clocks  
• All inputs and outputs referenced to the positive edge of the  
system clock  
• Automatic precharge, includes CONCURRENT Auto Precharge  
Mode and controlled Precharge  
• Data mask function by DQM  
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its  
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services  
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information  
and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or  
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or  
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to  
its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
1
www.issi.com - DRAM@issi.com  
Rev. A | Apr. 2012  
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IS42RM32400G-75BLI 替代型号

型号 品牌 替代类型 描述 数据表
IS42RM32400H-75BLI ISSI

功能相似

 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90

与IS42RM32400G-75BLI相关器件

型号 品牌 获取价格 描述 数据表
IS42RM32400G-75BLI-TR ISSI

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 		IC DRAM 128M PARALLEL 90TFBGA
IS42RM32400H-6BLI ISSI

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 		Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42RM32400H-75BLI ISSI

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 		Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
IS42RM32800D-10BL ISSI

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 		Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90
IS42RM32800D-10BLI ISSI

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 		Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90
IS42RM32800D-10TL ISSI

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 		Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42RM32800D-10TLI ISSI

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 		Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42RM32800D-6TL ISSI

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 		Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, PLASTIC, TSOP2-86
IS42RM32800D-6TLI ISSI

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 		Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, PLASTIC, TSOP2-86
IS42RM32800D-75BL ISSI

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 		Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90

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