生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 90 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.69 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 6 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B90 |
长度: | 13 mm | 内存密度: | 134217728 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 90 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42RM32400G-75BLI | ISSI |
获取价格 |
IC DRAM 128M PARALLEL 90TFBGA |
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IS42RM32400G-75BLI-TR | ISSI |
获取价格 |
IC DRAM 128M PARALLEL 90TFBGA |
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IS42RM32400H-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32400H-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32800D-10BL | ISSI |
获取价格 |
Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 |
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IS42RM32800D-10BLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 |
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IS42RM32800D-10TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 |
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IS42RM32800D-10TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 |
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IS42RM32800D-6TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, PLASTIC, TSOP2-86 |
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IS42RM32800D-6TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, PLASTIC, TSOP2-86 |
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