Datasheet > IS42RMVM32200K

IS42RMVM32200K

更新时间： 2024-11-06 01:15:07

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
33页	540K
描述
Auto refresh and self refresh

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数据手册

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IS42RMVM32200K 数据手册

IS42SM/RM/VM32200K

512K x 32Bits x 4Banks Mobile Synchronous DRAM

Description

These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and

output voltage levels are compatible with LVCMOS.

Features

. JEDEC standard 3.3V, 2.5V, 1.8V power supply

• Auto refresh and self refresh

• All inputs and outputs referenced to the positive edge of the

system clock

• All pins are compatible with LVCMOS interface

• 4K refresh cycle / 64ms

• Data mask function by DQM

• Internal 4 banks operation

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full Page for Sequential Burst

- 4 or 8 for Interleave Burst

• Burst Read Single Write operation

• Special Function Support

- PASR(Partial Array Self Refresh)

• Programmable CAS Latency : 2,3 clocks

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

- Full Strength or 1/2, 1/4, 1/8 of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - DRAM@issi.com

Rev. A | August 2012

12 3 4 5 6 7...33

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与IS42RMVM32200K相关器件

型号	品牌	获取价格	描述	数据表
IS42RMVM32400G	ISSI	获取价格	All pins are compatible with LVCMOS interface
IS42S16100	ISSI	获取价格	512K Words16 Bits2 Banks(16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100_08	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-10T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-10TI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-5BL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-5TL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-6BL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-6BLI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100-6T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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