是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, BGA54,9X9,32 |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.65 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 6 ns | 其他特性: | AUTO/SELF REFRESH, ALSO OPERATES AT 2.5V, 1.8V SUPPLY |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | S-PBGA-B54 |
长度: | 8 mm | 内存密度: | 134217728 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装等效代码: | BGA54,9X9,32 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 电源: | 2.5 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.00001 A |
子类别: | DRAMs | 最大压摆率: | 0.1 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IS42VM16800G-75BLI | ISSI |
功能相似 ![]() |
Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42RM16800G-75BLI-TR | ISSI |
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IC DRAM 128M PARALLEL 54TFBGA |
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IS42RM16800H-6BLI | ISSI |
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Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 |
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IS42RM16800H-6BLI-TR | ISSI |
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IC DRAM 128M PARALLEL 54TFBGA |
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IS42RM16800H-75BI | ISSI |
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2M x 16Bits x 4Banks Mobile Synchronous DRAM |
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IS42RM16800H-75BLI | ISSI |
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2M x 16Bits x 4Banks Mobile Synchronous DRAM |
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IS42RM16800H-75BLI-TR | ISSI |
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IC DRAM 128M PARALLEL 54TFBGA |
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IS42RM32100C-75BLI | ISSI |
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Synchronous DRAM, 1MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, TFBGA-90 |
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IS42RM32100D-6BLI | ISSI |
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Synchronous DRAM, 1MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32100D-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 1MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
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IS42RM32160C-75BLI-TR | ISSI |
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Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90 |
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