是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TFBGA, BGA54,9X9,32 | Reach Compliance Code: | compliant |
Factory Lead Time: | 10 weeks | 风险等级: | 5.65 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 6 ns |
其他特性: | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | S-PBGA-B54 | 长度: | 8 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 16MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA54,9X9,32 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
电源: | 2.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.00001 A | 子类别: | DRAMs |
最大压摆率: | 0.1 mA | 最大供电电压 (Vsup): | 3 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42RM16200D-6BLI | ISSI |
获取价格 |
1M x 16Bits x 2Banks Low Power Synchronous DRAM | |
IS42RM16200D-75BLI | ISSI |
获取价格 |
1M x 16Bits x 2Banks Low Power Synchronous DRAM | |
IS42RM16320E-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 32MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 | |
IS42RM16320E-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 | |
IS42RM16800E-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 | |
IS42RM16800E-6TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800E-6TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800E-7BI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, TFBGA-54 | |
IS42RM16800E-7TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800E-7TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 |