是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TFBGA, | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 6 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | S-PBGA-B54 | 长度: | 8 mm |
内存密度: | 536870912 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42RM16800E-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 | |
IS42RM16800E-6TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800E-6TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800E-7BI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, TFBGA-54 | |
IS42RM16800E-7TL | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800E-7TLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | |
IS42RM16800F-6BLE | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
IS42RM16800G-6BLI | ISSI |
获取价格 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM | |
IS42RM16800G-75BI | ISSI |
获取价格 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM | |
IS42RM16800G-75BLI | ISSI |
获取价格 |
Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 |