Datasheet > IS42RM16160K-6BLI

IS42RM16160K-6BLI

更新时间： 2023-01-02 17:05:21

品牌	Logo	应用领域
美国芯成 - ISSI		时钟动态存储器内存集成电路
页数	文件大小	规格书
34页	540K
描述
Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54

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IS42RM16160K-6BLI 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA, BGA54,9X9,32	Reach Compliance Code：	compliant
Factory Lead Time：	10 weeks	风险等级：	2.21
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	5.5 ns
其他特性：	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	最大时钟频率 (fCLK)：	166 MHz
I/O 类型：	COMMON	交错的突发长度：	1,2,4,8
JESD-30 代码：	S-PBGA-B54	长度：	8 mm
内存密度：	268435456 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	16	功能数量：	1
端口数量：	1	端子数量：	54
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	16MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装等效代码：	BGA54,9X9,32
封装形状：	SQUARE	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
电源：	2.5 V	认证状态：	Not Qualified
刷新周期：	8192	座面最大高度：	1.2 mm
自我刷新：	YES	连续突发长度：	1,2,4,8,FP
最大待机电流：	0.00001 A	子类别：	DRAMs
最大压摆率：	0.11 mA	最大供电电压 (Vsup)：	3 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
宽度：	8 mm	Base Number Matches：	1

IS42RM16160K-6BLI 数据手册

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IS42/45SM/RM/VM16160K

4M x 16Bits x 4Banks Mobile Synchronous DRAM

Description

These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features

. JEDEC standard 3.3V, 2.5V, 1.8V power supply.

• Auto refresh and self refresh.

• All inputs and outputs referenced to the positive edge of the

system clock.

• All pins are compatible with LVCMOS interface.

• 8K refresh cycle / 64ms.

• Data mask function by DQM.

• Internal 4 banks operation.

• Programmable Burst Length and Burst Type.

- 1, 2, 4, 8 or Full Page for Sequential Burst.

- 4 or 8 for Interleave Burst.

• Burst Read Single Write operation.

• Special Function Support.

- PASR(Partial Array Self Refresh)

• Programmable CAS Latency : 2,3 clocks.

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

• Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - DRAM@issi.com

Rev. B1 | Mar. 2015

12 3 4 5 6 7...34

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IS42RM16160K-6BLI 替代型号

型号	品牌	替代类型	描述	数据表
IS42RM16160D-7BLI	ISSI	功能相似	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207

与IS42RM16160K-6BLI相关器件

型号	品牌	获取价格	描述	数据表
IS42RM16160K-75BLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, FBGA-54
IS42RM16200D-6BLI	ISSI	获取价格	1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42RM16200D-75BLI	ISSI	获取价格	1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42RM16320E-6BLI	ISSI	获取价格	Synchronous DRAM, 32MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16320E-75BLI	ISSI	获取价格	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16800E-6BLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54
IS42RM16800E-6TL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800E-6TLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800E-7BI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, TFBGA-54
IS42RM16800E-7TL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54

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