Datasheet > IS42RM16200D-75BLI

IS42RM16200D-75BLI

更新时间： 2024-01-14 13:49:19

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器内存集成电路
页数	文件大小	规格书
34页	806K
描述
1M x 16Bits x 2Banks Low Power Synchronous DRAM

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IS42RM16200D-75BLI 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.02
Factory Lead Time：	10 weeks	风险等级：	5.73
访问模式：	DUAL BANK PAGE BURST	最长访问时间：	6 ns
其他特性：	AUTO/SELF REFRESH	JESD-30 代码：	S-PBGA-B54
JESD-609代码：	e1	长度：	8 mm
内存密度：	33554432 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	16	湿度敏感等级：	3
功能数量：	1	端口数量：	1
端子数量：	54	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	SQUARE
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	峰值回流温度（摄氏度）：	260
座面最大高度：	1.2 mm	自我刷新：	YES
最大供电电压 (Vsup)：	3 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	10	宽度：	8 mm
Base Number Matches：	1

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IS42/45SM/RM/VM16200D

1M x 16Bits x 2Banks Low Power Synchronous DRAM

Description

These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features

. JEDEC standard 3.3V, 2.5V, 1.8V power supply

• Auto refresh and self refresh

• All inputs and outputs referenced to the positive edge of the

system clock

• All pins are compatible with LVCMOS interface

• 4K refresh cycle / 64ms

• Data mask function by DQM

• Internal dual banks operation

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full Page for Sequential Burst

- 4 or 8 for Interleave Burst

• Burst Read Single Write operation

• Special Function Support

- PASR(Partial Array Self Refresh)

• Programmable CAS Latency : 2,3 clocks

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

- Full Strength or 1/2, 1/4, of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - dram@issi.com

Rev. A | November 2015

12 3 4 5 6 7...34

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与IS42RM16200D-75BLI相关器件

型号	品牌	获取价格	描述	数据表
IS42RM16320E-6BLI	ISSI	获取价格	Synchronous DRAM, 32MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16320E-75BLI	ISSI	获取价格	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
IS42RM16800E-6BLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54
IS42RM16800E-6TL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800E-6TLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800E-7BI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, TFBGA-54
IS42RM16800E-7TL	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800E-7TLI	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16800F-6BLE	ISSI	获取价格	Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, LEAD FREE, FBGA-54
IS42RM16800G-6BLI	ISSI	获取价格	2M x 16Bits x 4Banks Mobile Synchronous DRAM

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