Datasheet > IS42R32160D-7BLI

IS42R32160D-7BLI

更新时间： 2024-01-08 01:47:54

品牌	Logo	应用领域
美国芯成 - ISSI		时钟动态存储器内存集成电路
页数	文件大小	规格书
66页	1521K
描述
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, FBGA-90

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS42R32160D-7BLI 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	DSBGA	包装说明：	TFBGA, BGA90,9X15,32
针数：	90	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.28
风险等级：	5.56	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	5.4 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	143 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PBGA-B90
长度：	13 mm	内存密度：	536870912 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	32
功能数量：	1	端口数量：	1
端子数量：	90	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	16MX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA90,9X15,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
座面最大高度：	1.2 mm	自我刷新：	YES
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.004 A
子类别：	DRAMs	最大压摆率：	0.3 mA
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	宽度：	8 mm
Base Number Matches：	1

IS42R32160D-7BLI 数据手册

IS42/45R86400D/16320D/32160D

IS42/45S86400D/16320D/32160D

16Mx32, 32Mx16, 64Mx8

SEPTEMBER 2012

512Mb SDRAM

DEVICE OVERVIEW

ISSI's 512Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

FEATURES

•ꢀ Clock frequency: 200, 166, 143 MHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

PACKAGE INFORMATION

IS42/45S32160D IS42/45S16320D IS42/45S86400D

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V

ꢀ IS42/45SxxxxxDꢀ-ꢀVdd/Vddq = 3.3Vꢀ

ꢀ IS42/45RxxxxxDꢀ-ꢀVdd/Vddq = 2.5

•ꢀ LVTTLꢀinterface

IS42/45R32160D IS42/45R16320D IS42/45R86400D

4M x 32 x 4

banks

8M x 16 x 4

banks

16M x 8 x 4

banks

90-ballꢀTF-BGA

54-pinꢀTSOP-II

54-ballꢀTF-BGA

54-pinꢀTSOP-II

•ꢀ Programmableꢀburstꢀlengthꢀ

– (1, 2, 4, 8, full page)

KEY TIMING PARAMETERS

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

Parameter

-5

-6

-7

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

5ꢀ

10ꢀ

ꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

7.5ꢀ

ꢀ

nsꢀ

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

200ꢀ

100ꢀ

ꢀ

167ꢀ

100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

5.0ꢀ

6ꢀ

5.4ꢀ

6ꢀ

5.4ꢀ

5.4

nsꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

•ꢀ Packages:ꢀ

x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)

x32:ꢀ90-ballꢀTF-BGA

Parameter

16M x 32

32M x 16

64M x 8

16M x 8 x 4

banks

Conﬁguration 4M x 32 x 4

8M x 16 x 4

banks

BankꢀAddressꢀ BA0,ꢀBA1

Pins

•ꢀ TemperatureꢀRange:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive, A1 (-40^oC to +85^oC)

BA0,ꢀBA1

Autoprecharge A10/AP

Pins

A10/AP

Automotive, A2 (-40^oC to +105^oC)

Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)

Column

512(A0 – A8) 1K(A0ꢀ–ꢀA9)

2K(A0ꢀ–ꢀA9,ꢀ

Address

A11)

Refresh Count

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

08/29/2012

12 3 4 5 6 7...66

中文翻译

下载PDF

与IS42R32160D-7BLI相关器件

型号	品牌	获取价格	描述	数据表
IS42R32160D-7BLI-TR	ISSI	获取价格	Cache DRAM Module, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-
IS42R32160D-7BL-TR	ISSI	获取价格	Cache DRAM Module, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-
IS42R32160F	ISSI	获取价格	8K refresh cycles every 64 ms
IS42R32160F-6BL	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-7BL	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-7BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32200C1-75T	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
IS42R32200C1-75TI	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
IS42R32200C1-75TL	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42R32160D-7BLI

IS42R32160D-7BLI 技术参数

IS42R32160D-7BLI 数据手册

与IS42R32160D-7BLI相关器件

与IS42R32160D-7BLI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42R32160D-7BLI

IS42R32160D-7BLI 技术参数

IS42R32160D-7BLI 数据手册

与IS42R32160D-7BLI相关器件

与IS42R32160D-7BLI相关文章

您还可以找

您在本页遇到什么问题？