Datasheet > IS42R32160F-6BL

IS42R32160F-6BL

更新时间： 2024-01-02 03:01:53

品牌	Logo	应用领域
美国芯成 - ISSI		时钟动态存储器内存集成电路
页数	文件大小	规格书
61页	1279K
描述
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

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IS42R32160F-6BL 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA, BGA90,9X15,32	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.28
风险等级：	5.71	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	5.4 ns	其他特性：	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	166 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PBGA-B90
长度：	13 mm	内存密度：	536870912 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	32
功能数量：	1	端口数量：	1
端子数量：	90	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	16MX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA90,9X15,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
座面最大高度：	1.2 mm	自我刷新：	YES
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.004 A
子类别：	DRAMs	最大压摆率：	0.245 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	宽度：	8 mm
Base Number Matches：	1

IS42R32160F-6BL 数据手册

IS42R32160F, IS45R32160F

IS42S32160F, IS45S32160F

16Mx32, 512Mb SDRAM

NOVEMBER 2015

DEVIcE OVERVIEW

ISSI's 512Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

FEATURES

•ꢀ Clock frequency: 166, 143 MHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

PAcKAGE INFORMATION

IS42/45S32160F

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ Powerꢀsupply:ꢀV^dd/Vddq = 2.3V-3.6V

ꢀ IS42/45S32160Fꢀ-ꢀVdd/Vddq = 3.3Vꢀ

ꢀ IS42/45R32160Fꢀ-ꢀV^dd/Vddq = 2.5

•ꢀ LVTTLꢀinterface

IS42/45R32160F

4M x 32 x 4 banks

90-ballꢀTF-BGA

•ꢀ Programmableꢀburstꢀlengthꢀ

86-pinꢀTSOP-ll

– (1, 2, 4, 8, full page)

•ꢀ Programmableꢀburstꢀsequence:ꢀ

KEY TIMING PARAMETERS

Sequential/Interleave

Parameter

-6

-7

-75E Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

10ꢀ

ꢀ

—ꢀ

7.5ꢀ

ꢀꢀꢀnsꢀ

ꢀꢀns

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

167ꢀ

100ꢀ

ꢀ

143ꢀ

100ꢀ

—ꢀ

133ꢀ

ꢀꢀMhzꢀ

ꢀMhz

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

5.4ꢀ

ꢀ

operations capability

5.4ꢀ

6ꢀ

—ꢀ

ꢀꢀnsꢀ

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

•ꢀ Packages:ꢀ

90-ballꢀTF-BGA,ꢀ86-pinꢀTSOP-ll

Parameter

16M x 32

Conﬁguration 4M x 32 x 4

banks

•ꢀ TemperatureꢀRange:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive, A1 (-40^oC to +85^oC)

Bank Address BA0, BA1

Pins

Automotive, A2 (-40^oC to +105^oC)

Autoprecharge A10/AP

Pins

Row Address 8K(A0ꢀ–ꢀA12)

Column

512(A0 – A8)

Address

Refresh Count

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. B

11/13/2015

12 3 4 5 6 7...61

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与IS42R32160F-6BL相关器件

型号	品牌	获取价格	描述	数据表
IS42R32160F-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-7BL	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-7BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32200C1-75T	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
IS42R32200C1-75TI	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
IS42R32200C1-75TL	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86
IS42R32200C1-75TLI	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86
IS42R83200D	ISSI	获取价格	256-MBIT SYNCHRONOUS DRAM
IS42R83200D-75TL	ISSI	获取价格	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
IS42R83200D-75TLI	ISSI	获取价格	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54

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