Datasheet > IS42R83200J-75TL

IS42R83200J-75TL

更新时间： 2024-09-24 20:50:31

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
62页	1019K
描述
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, TSOP2-54

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技术参数
数据手册

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IS42R83200J-75TL 技术参数

生命周期：	Active	包装说明：	TSOP2,
Reach Compliance Code：	unknown	风险等级：	5.72
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	5.4 ns
其他特性：	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	JESD-30 代码：	R-PDSO-G54
长度：	22.22 mm	内存密度：	268435456 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	8
功能数量：	1	端口数量：	1
端子数量：	54	字数：	33554432 words
字数代码：	32000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	32MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP2	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	座面最大高度：	1.2 mm
自我刷新：	YES	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
宽度：	10.16 mm	Base Number Matches：	1

IS42R83200J-75TL 数据手册

IS42R83200J, IS42R16160J

IS45R83200J, IS45R16160J

32Meg x 8, 16Meg x16

256Mb SYNCHRONOUS DRAM

PRELIMINARY INFORMATION

APRIL 2016

OVERVIEW

FEATURES

ISSI'sꢀ256MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ256MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

•ꢀ Clockꢀfrequency:ꢀ133,ꢀ100ꢀMHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ SingleꢀPowerꢀsupply:ꢀ2.5Vꢀ+ꢀ0.2Vꢀ

•ꢀ LVTTLꢀinterface

IS42/45R83200Jꢀ IS42/45R16160Jꢀ

8Mꢀxꢀ8ꢀxꢀ4ꢀBanksꢀ 4Mꢀx16x4ꢀBanksꢀ

54-pinꢀTSOPIIꢀ

54-ballꢀBGAꢀ

54-pinꢀTSOPII

54-ballꢀBGAꢀ

•ꢀ Programmableꢀburstꢀlengthꢀ

ꢀ ꢀ

– (1, 2, 4, 8, full page)

•ꢀ Programmableꢀburstꢀsequence:ꢀ

KEY TIMING PARAMETERS

Sequential/Interleave

Parameter

-75

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

ClkꢀCycleꢀTimeꢀ ꢀꢀ

CASꢀLatencyꢀ=ꢀ3ꢀꢀ

CASꢀLatencyꢀ=ꢀ2ꢀꢀ

ꢀ

ꢀꢀꢀ

ꢀ

7.5ꢀ

10ꢀ

nsꢀꢀ

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ32ꢀmsꢀ(A2ꢀgrade)ꢀorꢀ

ClkꢀꢀFrequencyꢀ ꢀꢀ

CASꢀLatencyꢀ=ꢀ3ꢀꢀ

CASꢀLatencyꢀ=ꢀ2ꢀꢀ

ꢀ

64 ms (commercial, industrial, A1 grade)

133ꢀ

100ꢀ

MHzꢀ

MHz

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

5.4ꢀ

6ꢀ

nsꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

OPTIONS

Parameter

32M x 8

16M x 16

•ꢀ Package:

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

54-pinꢀTSOP-IIꢀ

54-ballꢀBGA

Refresh Count

Com./Ind. 8K/64ms

A1 8K/64ms

8K/64ms

8K/32ms

•ꢀ OperatingꢀTemperatureꢀRange:

Commercial (0^oC to +70^oC)

A2 8K/32ms

Industrial (-40^oCꢀtoꢀ+85^oC)

Row Addresses

A0-A12

A0-A8

AutomotiveꢀGradeꢀA1ꢀ(-40^oCꢀtoꢀ+85^oC)

AutomotiveꢀGradeꢀA2ꢀ(-40^oCꢀtoꢀ+105^oC)

Column Addresses

Bank Address Pins

Auto Precharge Pins

A0-A9

BA0, BA1

A10/AP

BA0, BA1

A10/AP

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 0B

04/20/2016

12 3 4 5 6 7...62

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与IS42R83200J-75TL相关器件

型号	品牌	获取价格	描述	数据表
IS42R83200J-75TLI	ISSI	获取价格	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, TSOP2-54
IS42R86400D	ISSI	获取价格	Internal bank for hiding row access/precharge
IS42R86400F	ISSI	获取价格	8K refresh cycles every 64 ms
IS42RM16160D-10BL	ISSI	获取价格	Synchronous DRAM, 16MX16, 8ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207,
IS42RM16160D-10BLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 8ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207,
IS42RM16160D-10TL	ISSI	获取价格	Synchronous DRAM, 16MX16, 8ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16160D-10TLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 8ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16160D-7BLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207
IS42RM16160D-7TLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42RM16160E-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54

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