Datasheet > IS42R32160F

IS42R32160F

更新时间： 2024-02-13 04:57:16

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
68页	1711K
描述
8K refresh cycles every 64 ms

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数据手册

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IS42R32160F 数据手册

IS42/45R86400F/16320F/32160F

IS42/45S86400F/16320F/32160F

16Mx32, 32Mx16, 64Mx8

512Mb SDRAM

ADVANCED INFORMATION

NOVEMBER 2013

DEVICE OVERVIEW

ISSI's 512Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

FEATURES

•ꢀ Clock frequency: 200, 166, 143 MHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

PACKAGE INFORMATION

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V

ꢀ IS42/45SxxxxxDꢀ-ꢀVdd/Vddq = 3.3Vꢀ

ꢀ IS42/45RxxxxxDꢀ-ꢀVdd/Vddq = 2.5

•ꢀ LVTTLꢀinterface

IS42/45S32160D

IS42/45S16320D

IS42/45S86400D

IS42/45R86400D

IS42/45R32160D

IS42/45R16320D

4M x 32 x 4 banks

90-ballꢀTF-BGA

86-pinꢀTSOP-ll

8M x 16 x 4 banks

54-pinꢀTSOP-II

54-ballꢀTF-BGA

16M x 8 x 4 banks

54-pinꢀTSOP-II

•ꢀ Programmableꢀburstꢀlengthꢀ

– (1, 2, 4, 8, full page)

KEY TIMING PARAMETERS

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

Parameter

-5

-6

-7

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

5ꢀ

10ꢀ

ꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

7.5ꢀ

ꢀ

nsꢀ

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

200ꢀ

100ꢀ

ꢀ

167ꢀ

100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

5.0ꢀ

6ꢀ

5.4ꢀ

6ꢀ

5.4ꢀ

5.4

nsꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

•ꢀ Packages:ꢀ

x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)

x32:ꢀ90-ballꢀTF-BGA,ꢀ86-pinꢀTSOP-ll

Parameter

16M x 32

32M x 16

64M x 8

16M x 8 x 4

banks

Conﬁguration 4M x 32 x 4

8M x 16 x 4

banks

BankꢀAddressꢀ BA0,ꢀBA1

Pins

•ꢀ TemperatureꢀRange:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive, A1 (-40^oC to +85^oC)

BA0,ꢀBA1

Autoprecharge A10/AP

Pins

A10/AP

Automotive, A2 (-40^oC to +105^oC)

Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)

Column

512(A0 – A8) 1K(A0ꢀ–ꢀA9)

2K(A0ꢀ–ꢀA9,ꢀ

Address

A11)

Refresh Count

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00A

11/5/2013

12 3 4 5 6 7...68

中文翻译

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与IS42R32160F相关器件

型号	品牌	获取价格	描述	数据表
IS42R32160F-6BL	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-6BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-7BL	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32160F-7BLI	ISSI	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207
IS42R32200C1-75T	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
IS42R32200C1-75TI	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
IS42R32200C1-75TL	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86
IS42R32200C1-75TLI	ISSI	获取价格	Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86
IS42R83200D	ISSI	获取价格	256-MBIT SYNCHRONOUS DRAM
IS42R83200D-75TL	ISSI	获取价格	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54

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