是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | TFBGA, BGA90,9X15,32 |
Reach Compliance Code: | compliant | 风险等级: | 5.71 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5.4 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 143 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PBGA-B90 | JESD-609代码: | e3 |
长度: | 13 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | CACHE DRAM MODULE | 内存宽度: | 32 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 90 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX32 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA90,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 225 | 电源: | 2.5 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.004 A |
子类别: | DRAMs | 最大压摆率: | 0.3 mA |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS42R32160F | ISSI |
获取价格 |
8K refresh cycles every 64 ms | |
IS42R32160F-6BL | ISSI |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207 | |
IS42R32160F-6BLI | ISSI |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207 | |
IS42R32160F-7BL | ISSI |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207 | |
IS42R32160F-7BLI | ISSI |
获取价格 |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207 | |
IS42R32200C1-75T | ISSI |
获取价格 |
Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | |
IS42R32200C1-75TI | ISSI |
获取价格 |
Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | |
IS42R32200C1-75TL | ISSI |
获取价格 |
Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86 | |
IS42R32200C1-75TLI | ISSI |
获取价格 |
Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86 | |
IS42R83200D | ISSI |
获取价格 |
256-MBIT SYNCHRONOUS DRAM |