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IS42R32160D-6BLI-TR PDF预览

IS42R32160D-6BLI-TR

更新时间: 2024-01-16 03:16:35
品牌 Logo 应用领域
美国芯成 - ISSI 时钟动态存储器内存集成电路
页数 文件大小 规格书
66页 1332K
描述
Cache DRAM Module, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, FBGA-90

IS42R32160D-6BLI-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:TFBGA, BGA90,9X15,32
Reach Compliance Code:compliant风险等级:5.69
访问模式:FOUR BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):166 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B90JESD-609代码:e3
长度:13 mm内存密度:536870912 bit
内存集成电路类型:CACHE DRAM MODULE内存宽度:32
湿度敏感等级:1功能数量:1
端口数量:1端子数量:90
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA90,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):225电源:2.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.004 A
子类别:DRAMs最大压摆率:0.35 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

IS42R32160D-6BLI-TR 数据手册

 浏览型号IS42R32160D-6BLI-TR的Datasheet PDF文件第2页浏览型号IS42R32160D-6BLI-TR的Datasheet PDF文件第3页浏览型号IS42R32160D-6BLI-TR的Datasheet PDF文件第4页浏览型号IS42R32160D-6BLI-TR的Datasheet PDF文件第5页浏览型号IS42R32160D-6BLI-TR的Datasheet PDF文件第6页浏览型号IS42R32160D-6BLI-TR的Datasheet PDF文件第7页 
IS42/45R86400D/16320D/32160D  
IS42/45S86400D/16320D/32160D  
16Mx32, 32Mx16, 64Mx8  
512Mb SdRAM  
PRELiMiNARY iNFORMATiON  
JUNE 2011  
PAcKAGE iNFORMATiON  
FEATURES  
iS42/45S32160d iS42/45S16320d iS42/45S86400d  
•ꢀ Clockꢀfrequency:ꢀ200,ꢀ166,ꢀ143ꢀꢀMHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positiveꢀclockꢀedge  
iS42/45R32160d iS42/45R16320d iS42/45R86400d  
4Mꢀxꢀ32ꢀxꢀ4ꢀ  
banks  
8Mꢀxꢀ16ꢀxꢀ4ꢀꢀ  
banks  
16Mꢀxꢀ8ꢀxꢀ4ꢀꢀ  
banks  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V  
ꢀ IS42/45SxxxxxDꢀ-ꢀVdd/Vddq = 3.3Vꢀ  
ꢀ IS42/45RxxxxxDꢀ-ꢀVdd/Vddq = 2.5ꢀꢀꢀ  
•ꢀ LVTTLꢀinterface  
•ꢀ Programmableꢀburstꢀlengthꢀꢀ  
–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)  
•ꢀ Programmableꢀburstꢀsequence:ꢀꢀ  
Sequential/Interleaveꢀ  
90-ballꢀTF-BGA  
54-pinꢀTSOP-II  
54-ballꢀTF-BGA  
54-pinꢀTSOP-II  
KEY TiMiNG PARAMETERS  
Parameter  
ClkꢀCycleꢀTimeꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ  
-5  
-6  
-7  
7ꢀ  
7.5ꢀ  
Unꢀt  
nsꢀ  
ns  
ꢀꢀ  
5ꢀ  
10ꢀ  
6ꢀ  
10ꢀ  
ClkꢀFrequencyꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
200ꢀ  
100ꢀ  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
167ꢀ  
100ꢀ  
143ꢀ  
133ꢀ  
Mhzꢀ  
Mhz  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ  
•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)  
5.0ꢀ  
6ꢀ  
5.4ꢀ  
6ꢀ  
5.4ꢀ  
5.4ꢀ  
nsꢀ  
ns  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀꢀ  
operationsꢀcapability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
command  
AddRESS TABLE  
Parameter  
16M x 32  
32M x 16  
64M x 8  
Configuration 4Mꢀxꢀ32ꢀxꢀ4ꢀ  
8Mꢀxꢀ16ꢀxꢀ4ꢀꢀ 16Mꢀxꢀ8ꢀxꢀ4ꢀꢀ  
banks  
•ꢀ Packages:ꢀꢀ  
banks  
BankꢀAddressꢀ BA0,ꢀBA1  
Pins  
banks  
x8/x16:ꢀ54-pinꢀTF-TSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)  
x32:ꢀ90-ballꢀTF-BGA  
BA0,ꢀBA1  
BA0,ꢀBA1  
•ꢀ TemperatureꢀRange:ꢀ  
Autoprechargeꢀ A10/AP  
Pins  
A10/AP  
A10/AP  
Commercialꢀ(0oCꢀtoꢀ+70oC)  
Industrialꢀ(-40oCꢀtoꢀ+85oC)  
Automotive,ꢀA1ꢀ(-40oCꢀtoꢀ+85oC)  
RowꢀAddress 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
Columnꢀ  
512(A0ꢀ–ꢀA8) 1K(A0ꢀ–ꢀA9)  
2K(A0ꢀ–ꢀA9,ꢀ  
A11)  
Automotive,ꢀA2ꢀ(-40oCꢀtoꢀ+105oC)  
Address  
RefreshꢀCountꢀ  
Com./Ind./A1ꢀ 8Kꢀ/ꢀ64msꢀ  
A2 8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64msꢀ  
8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64msꢀ  
8Kꢀ/ꢀ16ms  
dEvicE OvERviEW  
ISSI'sꢀ512MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ  
dataꢀtransferꢀusingꢀpipelineꢀarchitecture.ꢀꢀAllꢀinputsꢀandꢀ  
outputsꢀsignalsꢀreferꢀꢀtoꢀtheꢀrisingꢀedgeꢀofꢀtheꢀclockꢀinput.ꢀ  
Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwith-  
outꢀnotice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀ  
theꢀlatestꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀ  
reasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀap-  
plicationsꢀunlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
1
Rev.ꢀ00B  
06/09/2011  

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