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IRLR8113PBF PDF预览

IRLR8113PBF

更新时间: 2024-10-30 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 260K
描述
HEXFET Power MOSFET

IRLR8113PBF 数据手册

 浏览型号IRLR8113PBF的Datasheet PDF文件第2页浏览型号IRLR8113PBF的Datasheet PDF文件第3页浏览型号IRLR8113PBF的Datasheet PDF文件第4页浏览型号IRLR8113PBF的Datasheet PDF文件第5页浏览型号IRLR8113PBF的Datasheet PDF文件第6页浏览型号IRLR8113PBF的Datasheet PDF文件第7页 
PD - 95779A  
IRLR8113PbF  
IRLU8113PbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l Lead-Free  
VDSS RDS(on) max  
Qg  
22nC  
6.0m  
30V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRLR8113  
I-Pak  
IRLU8113  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
V
V
Gate-to-Source Voltage  
± 20  
94  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
67  
A
380  
89  
DM  
P
P
@TC = 25°C  
@TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
W
D
D
44  
Linear Derating Factor  
Operating Junction and  
0.59  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case)  
10 lbf in (1.1 N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.69  
50  
Units  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
JC  
JA  
JA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
Notes  through are on page 11  
www.irf.com  
1
12/7/04  

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