IRLR8203TRR

更新时间： 2024-10-30 13:08:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管脉冲
页数	文件大小	规格书
10页	111K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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中文翻译

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数据手册

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IRLR8203TRR 数据手册

PD - 94404

IRLR8203

SMPS MOSFET

IRLU8203

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

V_DSS

R_DS(on)max

I_D

30V

6.8mΩ

110A

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR8203

I-Pak

IRLU8203

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

120

P_D@T_C= 25°C

P_D@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

140

0.92

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.09

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Notes through are on page 10

www.irf.com

03/12/02

12 3 4 5 6 7...10

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