Datasheet > IRLR8503TRPBF

IRLR8503TRPBF

更新时间： 2024-11-01 19:39:19

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
9页	238K
描述
Power Field-Effect Transistor, 44A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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IRLR8503TRPBF 数据手册

IRL^PR^D-8⁹³5⁸0³⁹3^C

IRLR8503

• N-Channel Application-Specific MOSFET

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Minimizes Parallel MOSFETs for high current

applications

HEXFET^®MOSFET for DC-DC Converters

• 100% R_GTested

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve very low on-resistance.

The reduced conduction losses makes it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

D-Pak

The IRLR8503 has been optimized and is 100% tested for

all parameters that are critical in synchronous buck

converters including R_DS(on), gate charge and Cdv/dt-

induced turn-on immunity. The IRLR8503 offers an

extremely low combination of Q_sw& R_DS(on)for reduced

losses in control FET applications.

DEVICE RATINGS (MAX. Values)

IRLR8503

V_DS

R_DS(on)

Q_G

30V

18 mΩ

20 nC

8 nC

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical PCB

mount application.

Q_SW

Q_OSS

29.5 nC

Absolute Maximum Ratings

Parameter

Symbol

V_DS

IRLR8503

Units

Drain-Source Voltage

±20

Gate-Source Voltage

V_GS

T_C= 25°C

Continuous Drain or Source Current

T_C= 90°C

Pulsed Drain Current

196

T_C= 25°C

Power Dissipation

T_C= 90°C

°C

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

T_J, T

I_S

-55 to 150

STG

Pulsed Source Current

I_SM

196

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Symbol

R_θJA

Typ

–––

Max

Units

°C/W

Maximum Junction-to-Lead

R_θJL

2.0

www.irf.com

5/26/05

12 3 4 5 6 7...9

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