IRLML2402

更新时间： 2024-11-24 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	84K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRLML2402 数据手册

PD- 93755

IRLML6402

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= -20V

R_DS(on)= 0.065Ω

Description

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

Micro3

Athermallyenhancedlargepadleadframehasbeenincorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3 , is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-3.7

-2.2

-22

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

-55 to + 150

T_J,T_STG

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

www.irf.com

8/13/99

12 3 4 5 6 7 8

中文翻译

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IRLML2402 替代型号

型号	品牌	替代类型	描述	数据表
IRLML2402PBF	INFINEON	完全替代	HEXFET Power MOSFET

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IRLML2402TR	INFINEON	获取价格	HEXFET POWER MOSFET
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