IRLML2502TR

更新时间： 2024-10-30 12:26:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	132K
描述
HEXFETPower MOSFET

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中文翻译

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数据手册

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IRLML2502TR 数据手册

PD - 93757C

IRLML2502

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l N-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.045Ω

Description

These N-Channel MOSFETs from International Rectifier

utilizeadvancedprocessingtechniquestoachieveextremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

thatHEXFET^powerMOSFETsarewellknownfor,provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

suchasportableelectronicsandPCMCIAcards.Thethermal

resistance and power dissipation are the best available.

Micro3

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

4.2

3.4

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.25

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

V_GS

Gate-to-Source Voltage

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

www.irf.com

04/30/03

12 3 4 5 6 7...9

中文翻译

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