Datasheet > IRLML2803GPBF_11

IRLML2803GPBF_11

更新时间： 2024-11-30 12:46:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	230K
描述
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET

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IRLML2803GPBF_11 数据手册

PD - 96164A

IRLML2803GPbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= 30V

_DS(on)= 0.25Ω

l Lead-Free

l Halogen-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

Micro3™

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint.This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The

low profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Max.

1.2

Units

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 70°C

0.93

7.3

@T = 25°C

540

Power Dissipation

Linear Derating Factor

4.3

±20

mW/°C

Gate-to-Source Voltage

E_AS

3.9

Single Pulse Avalanche Energy

Peak diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

dv/dt

V/ns

°C

-55 to + 150

J , STG

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

–––

Max.

230

Units

°C/W

R_θJA

www.irf.com

12/13/11

12 3 4 5 6 7 8

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