Datasheet > IRLML2502

IRLML2502

更新时间： 2024-10-30 12:31:47

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
2页	289K
描述
Ultra Low On-Resistance N-Channel MOSFET Fast switching.

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中文翻译

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数据手册

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IRLML2502 数据手册

MMMOOOSSSFFFEEETTT

SMD Type

SSMMDDTTyyppee

Product specification

IRLML2502

SOT-23

Unit: mm

+0.1

2.9_-0.1

■ Features

+0.1

0.4_-0.1

● Ultra Low On-Resistance

● N-Channel MOSFET

● Fast switching.

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

1.Gate

2.Emitter

2.Soruce

3.Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

Gate-to-source voltage

VGS

±12

4.2

Continuous drain curent, @ VGS=4.5V,TA=25℃

Continuous drain curent, @ VGS=4.5V,TA=70℃

Pulsed drain current *1

3.4

IDM

1.25

℃/W

℃

Power dissipation

@ TA=25℃

Thermal Resistance,Junction- to-Ambient

Junction and storage temperature range

RθJA

100

TJ,TSTG

-55 to +150

*1.Reptitive rating:pulse width limited by max.junction temperature.

*2.ISD≤ 0.93A,di/dt≤ 90A/μs,VDD ≤V(BR)DSS,TJ≤150℃

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

4008-318-123

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