Datasheet > IRLML2502

IRLML2502

更新时间： 2024-11-21 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	520K
描述
SOT-23

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中文翻译

获取价格

数据手册

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IRLML2502 数据手册

IRLML2502

MOSFET (N-CHANNEL)

FEATURES

 Fast switching

 Ultra Low On-Resistance

 Surface Mount device

SOT-23

MECHANICAL DATA

 Case: SOT-23

 Case Material: Molded Plastic. UL flammability

 Classification Rating: 94V-0

Weight: 0.008 grams (approximate)



MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-source voltage

V_GS

Gate-source voltage

±12

4.2

I_D

Continuous drain current

Pulsed drain current (Note 1)

Power dissipation

I_DM

P_D

R_θJA

1.25

100

150

Thermal resistance from Junction to ambient

Junction temperature

°C/W

°C

T_J

-55 ~+150

Storage temperature

T_STG

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

VGS=0V, ID=250μA

I_DSS

V_DS=16V,

V =0V

I_GSS

V_DS=0V,

V^GS=±12V

±100 nA

0.6

1.2

Gate-threshold voltage (note 1)

V_GS(th)

VDS=VGS, ID=250μA

mΩ

V^GS=4.5V, I^D=4.2A

Drain-source on-resistance (note 1)

R_DS(ON)

mΩ V^GS=2.5V, I^D=3.6A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

t_d(on)

Forward transconductance (note 1)

Diode forward voltage (note 1)

Diode forward current

Input capacitance

VDS=10V, ID=4.0A

IS=1.3A, VGS=0V,Tj=25

2.8

1.2

1.3

°C

740

7.5

V_{DS=15V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

t_r

t_d(off)

t_f

Turn-on rise time

V_DD=10V,I_D=1A,

R_GEN=6Ω,R_L=10Ω

Turn-off delay time

Turn-off fall time

Q_g

Q_gs

Q_gd

2.7

2.6

Total gate charge

1.8

1.7

Gate-source charge

VDS=10V,VGS=5V,I_D=4A

Gate-drain charge

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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