IRLML2803

更新时间： 2024-09-12 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	190K
描述
Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)

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IRLML2803 数据手册

PD - 91258D

IRLML2803

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel MOSFET

l SOT-23 Footprint

V_DSS= 30V

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

R_DS(on)= 0.25Ω

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

Micro3

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

1.2

0.93

7.3

P_D@T_A= 25°C

Power Dissipation

540

4.3

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

5.0

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

230

Units

°C/W

R_θJA

4/28/03

12 3 4 5 6 7...9

中文翻译

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