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IRLML2502PBF-1 PDF预览

IRLML2502PBF-1

更新时间: 2024-11-19 01:20:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 193K
描述
Compatible with Existing Surface Mount Techniques

IRLML2502PBF-1 数据手册

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IRLML2502PbF-1  
HEXFET® Power MOSFET  
VDS  
20  
0.045  
8.0  
V
Ω
RDS(on) max  
(@VGS = 4.5V)  
Qg (typical)  
G
S
1
2
nC  
A
3
D
ID  
4.2  
(@TA = 25°C)  
Micro3(SOT-23)  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro3 (SOT-23)  
Orderable Part Number  
IRLML2502TRPbF-1  
Form  
Quantity  
3000  
IRLML2502TRPbF-1  
Tape and Reel  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
4.2  
3.4  
A
33  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.25  
0.8  
W
Power Dissipation  
Linear Derating Factor  
0.01  
± 12  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback  
October 28, 2014  

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