型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLML2502GPBF | INFINEON |
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HEXFET Power MOSFET | |
IRLML2502GTRPBF | INFINEON |
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Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRLML2502PBF | TYSEMI |
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Ultra Low On-Resistance SOT-23 Footprint N-Channel MOSFET Available in Tape and Reel | |
IRLML2502PBF | INFINEON |
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HEXFET Power MOSFET | |
IRLML2502PBF_12 | INFINEON |
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Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint | |
IRLML2502PBF-1 | INFINEON |
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Compatible with Existing Surface Mount Techniques | |
IRLML2502PBF-1_15 | INFINEON |
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Compatible with Existing Surface Mount Techniques | |
IRLML2502TR | INFINEON |
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HEXFETPower MOSFET | |
IRLML2502TR | UMW |
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漏源电压(Vdss):20V;持续漏极电流(Id)(在25°C时):4.2A;栅极-源极阈 | |
IRLML2502TRPBF | TYSEMI |
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HEXFET Power MOSFET |