生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.37 | 雪崩能效等级(Eas): | 105 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 2.3 A |
最大漏源导通电阻: | 0.22 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 18 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLM120AL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM120AS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM120ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM120ATF | ONSEMI |
获取价格 |
N 沟道 A-FET 200 V、1.13 A、800 mΩ | |
IRLM120ATF_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM120ATF-Q | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRLM210 | FAIRCHILD |
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Advanced Power MOSFET | |
IRLM210A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLM210ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM220A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |