Datasheet > IRLML0030TRPBF

IRLML0030TRPBF

更新时间： 2024-02-19 12:05:19

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
2页	323K
描述
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses

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中文翻译

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IRLML0030TRPBF 数据手册

Product specification

IRLML0030TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS Max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Micro3 (SOT-23)

IRLML0030TRPbF

Application(s)

• Load/ System Switch

Features and Benefits

Features

Benefits

Low R_DS(on)( ≤ 27mΩ)

Industry-standard pinout

Lower switching losses

Multi-vendor compatibility

results in Easier manufacturing

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Industrial qualification

⇒

Environmentally friendly

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

5.3

4.3

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

0.8

0.01

± 20

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_θJA

Junction-to-Ambient

°C/W

R_θJA

–––

Junction-to-Ambient (t<10s)

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