Datasheet > IRLM6402GPBF

IRLM6402GPBF

更新时间： 2024-02-01 14:38:17

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	180K
描述
HEXFETPower MOSFET

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IRLM6402GPBF 数据手册

PD - 96161

IRLML6402GPbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= -20V

R_DS(on)= 0.065Ω

l Lead-Free

l Halogen-Free

Description

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET^®

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

Athermallyenhancedlargepadleadframehasbeenincorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3™, is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Micro3™

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-3.7

-2.2

-22

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

www.irf.com

07/22/08

12 3 4 5 6 7 8

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