Datasheet > IRLML0030TR

IRLML0030TR

更新时间： 2024-05-23 22:22:21

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	401K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:5.3A;Vgs(th)(V):±20;漏源导通电阻:40mΩ@10V;漏源导通电阻:27mΩ@4.5V

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IRLML0030TR 数据手册

UMW

IRLML0030

Features

SOT–23

VDS (V) = 30V

RDS(ON)

27m (VGS = 10V)

40m (VGS = 4.5V)

Benefits

1. GATE

Lower switching losses

Multi-vendor compatibility

Easier manufacturing

2. SOURCE

3. DRAIN

Environmentally friendly

Increased reliability

Absolute Maximum Ratings

Max.

Symbol

Parameter

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

5.3

Continuous Drain Current, V_GS@ 10V

4.3

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

Linear Derating Factor

0.8

0.01

± 20

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_θJA

Junction-to-Ambient

°C/W

R_θJA

–––

Junction-to-Ambient (t<10s)

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Surface mounted on 1 in square Cu board

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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