Datasheet > IRLML0040

IRLML0040

更新时间： 2024-06-27 12:13:21

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	494K
描述
SOT-23

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中文翻译

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数据手册

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IRLML0040 数据手册

IRLML0040

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=40V,R_DS(ON)=56mΩ@V_GS=10 V,I_D=3.6A

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

3.6

2.9

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

Linear Derating Factor

0.8

0.01

W/°C

V_GS

± 16

-55 to + 150

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

°C

R_θJA

100

Junction-to-Ambient

°C/W

Junction-to-Ambient (t<10s)

Electric Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

–––

V_GS= 0V, I_D= 250μA

V_(BR)DSS/ T_J

–––

1.0

–––

0.04

1.8

–––

2.5

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 3.6A

R_DS(on)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V_GS= 4.5V, I_D= 2.9A

V_DS= V_GS, I_D= 25μA

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 16V

V_GS(th)

I_DSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

μA

250

100

I_GSS

Gate-to-Source Reverse Leakage

Internal Gate Resistance

Forward Transconductance

Total Gate Charge

–––

6.2

–––

1.1

–––

2.6

-100

–––

3.9

V_GS= -16V

R_G

gfs

Q_g

_DS= 10V, I_D= 3.6A

I_D= 3.6A

V_DS= 20V

–––

Q_gs

Gate-to-Source Charge

–––

0.7

–––

Q_gd

t_d(on)

t_r

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

1.4

5.1

5.4

6.4

–––

V_GS= 4.5V

V_DD= 20V

I_D= 1.0A

R_G= 6.8 Ω

V_GS= 4.5V

t_d(off)

Turn-Off Delay Time

t_f

Fall Time

–––

4.3

266

–––

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GS= 0V

iss

C_oss

C_rss

V_DS= 25V

ƒ = 1.0MHz

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

–––

1.3

I_SM

Pulsed Source Current

(Body Diode)

–––

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

1.2

–––

T_J= 25°C, I_S= 1.3A, V_GS= 0V

ns T_J= 25°C, V_R= 32V, I_F= 1.3 A

di/dt = 100A/μs

Q_rr

9.3

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Surface mounted on 1 in square Cu board

1 / 6

E-mail:hkt@heketai.com

12 3 4 5 6

中文翻译

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