Datasheet > IRLML0060TR

IRLML0060TR

更新时间： 2024-10-15 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	524K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:2.7A;Vgs(th)(V):±16;漏源导通电阻:92mΩ@10V

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IRLML0060TR 数据手册

UMW

IRLML0060

N-Channel 60 V (D-S) MOSFET

Product summary

SOT–23

V_DS(V)

R_DS(on)(mΩ)

92 at V_GS= 10 V

116 at V_GS= 4.5 V

1. GATE

2. SOURCE

3. DRAIN

Features

Industry-standard pinout

•

Compatible with existing Surface Mount Techniques

compliant containing no lead, no bromide and no halogen

Industrial qualification

SOT23

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

2.7

2.1

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

Maximum Power Dissipation

Linear Derating Factor

0.80

0.01

W/°C

V_GS

± 16

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_JA

Junction-to-Ambient

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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