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IRLML0040TRPBF PDF预览

IRLML0040TRPBF

更新时间: 2024-02-19 13:15:48
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
10页 226K
描述
HEXFET Power MOSFET

IRLML0040TRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MICRO-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.12Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:324909
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:Micro3 (SOT23)
Samacsys Released Date:2017-09-21 14:30:14Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):3.6 A
最大漏极电流 (ID):3.6 A最大漏源导通电阻:0.056 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.3 W最大脉冲漏极电流 (IDM):15 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLML0040TRPBF 数据手册

 浏览型号IRLML0040TRPBF的Datasheet PDF文件第2页浏览型号IRLML0040TRPBF的Datasheet PDF文件第3页浏览型号IRLML0040TRPBF的Datasheet PDF文件第4页浏览型号IRLML0040TRPBF的Datasheet PDF文件第5页浏览型号IRLML0040TRPBF的Datasheet PDF文件第6页浏览型号IRLML0040TRPBF的Datasheet PDF文件第7页 
PD - 96309  
IRLML0040TRPbF  
HEXFET® Power MOSFET  
VDSS  
V
V
40  
± 16  
VGS Max  
RDS(on) max  
(@VGS = 10V)  
56  
78  
m
m
RDS(on) max  
(@VGS = 4.5V)  
TM  
Micro3 (SOT-23)  
IRLML0040TRPbF  
Application(s)  
Load/ System Switch  
DC Motor Drive  
Features and Benefits  
Features  
Benefits  
Low RDS(on) ( 56m)  
Lower switching losses  
Multi-vendor compatibility  
Industry-standard pinout  
Compatible with existing Surface Mount Techniques  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer qualification  
results in Easier manufacturing  
Environmentally friendly  
Increased reliability  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
V
VDS  
40  
3.6  
2.9  
15  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
A
Pulsed Drain Current  
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
0.8  
0.01  
± 16  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
RθJA  
Junction-to-Ambient  
°C/W  
RθJA  
–––  
99  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through „ are on page 10  
www.irf.com  
1
05/26/10  

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