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IRLML2060 PDF预览

IRLML2060

更新时间: 2023-09-03 20:37:34
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 205K
描述
60V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装

IRLML2060 数据手册

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PD - 97448A  
IRLML2060TRPbF  
HEXFET® Power MOSFET  
VDS  
60  
V
V
VGS Max  
± 16  
RDS(on) max  
(@VGS = 10V)  
480  
640  
m
TM  
RDS(on) max  
(@VGS = 4.5V)  
Micro3 (SOT-23)  
m
IRLML2060TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Features  
Benefits  
Industry-standard pinout  
Multi-vendor compatibility  
results in Easier manufacturing  
Compatible with existing Surface Mount Techniques  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1  
Environmentally friendly  
Increased reliability  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
60  
Units  
V
VDS  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
1.2  
0.93  
4.8  
A
Pulsed Drain Current  
PD @TA = 25°C  
PD @TA = 70°C  
1.25  
0.80  
0.01  
± 16  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
RJA  
Junction-to-Ambient  
°C/W  
RJA  
–––  
99  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through „ are on page 10  
www.irf.com  
1
03/09/12  

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