Datasheet > IRLML2244

IRLML2244

更新时间： 2023-09-03 20:36:42

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	230K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLML2244 数据手册

PD - 97631

IRLML2244TRPbF

HEXFET^®Power MOSFET

V_DS

-20

V_{GS Max}

± 12

R_{DS(on) max}

(@V_GS= -4.5V)

R_{DS(on) max}

(@V_GS= -2.5V)

Micro3 (SOT-23)

IRLML2244TRPbF

Application(s)

• System/Load Switch

Features and Benefits

Features

Benefits

Low R_DS(on)( ≤ 54mΩ)

Lower switching losses

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

Environmentally friendly

Increased reliability

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Consumer qualification

⇒

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

-20

-4.3

-3.4

-18

Drain-Source Voltage

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

1.3

Maximum Power Dissipation

Linear Derating Factor

P_D@T_A= 25°C

P_D@T_A= 70°C

0.8

0.01

± 12

W/°C

Gate-to-Source Voltage

V_GS

-55 to + 150

Junction and Storage Temperature Range

°C

T_J,T_STG

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient

R_θJA

–––

100

°C/W

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

1/24/11

12 3 4 5 6 7...11

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