Datasheet > IRLML2060TR

IRLML2060TR

更新时间： 2024-10-15 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	572K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:1.2A;Vgs(th)(V):±16;漏源导通电阻:85mΩ@10V

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数据手册

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IRLML2060TR 数据手册

UMW

IRLML2060

Features

SOT–23

VDS (V) = 60V

RDS(ON)

85m

99m

(VGS

10V)

4.5V)

Application(s)

Load/ System Switch

1. GATE

2. SOURCE

3. DRAIN

Benefits

Multi-vendor compatibility

Easier manufacturing

Environmentally friendly

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Units

Max.

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

1.2

0.93

4.8

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

0.80

0.01

± 16

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_JA

100

Junction-to-Ambient

°C/W

R_JA

Junction-to-Ambient (t<10s)

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

Surface mounted on 1 in square Cu board.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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