Datasheet > IRLML0060

IRLML0060

更新时间： 2024-06-27 12:13:54

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	818K
描述
SOT-23

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中文翻译

获取价格

数据手册

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IRLML0060 数据手册

IRLML0060

MOSFET (N-CHANNEL)

FEATURES

 VDS=60V, ID=3A, R^DS(ON)<105mΩ, @VGS=10V

 Fast switching

 Ultra Low On-Resistance

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

Marking:N60

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

Value

Unit

Gate-source voltage

V_GS

±20

TA=25°C

3.0

Continuous drain current

I_D

TA=70°C

2.1

Pulsed drain current (Note 1)

IDM

TA=25°C

1.25

0.8

Power dissipation

TA=70°C

Linear Derating Factor

0.01

100

W/°C

°C/W

°C

Thermal resistance from Junction to ambient

Storage and Junction temperature

R_θJA*

TJ,TSTG

-55 ~+150

*Surface mounted on 1 in square Cu board

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V^(BR)DSS

Drain-Source breakdown voltage

VGS=0V, ID=250μA

250

±100

2.5

V_DS=60V,

=0V

=0V,

Zero gate voltage drain current

I_DSS

μA

Tj=125°C

Gate-body leakage current

Gate-threshold voltage (note 1)

I_GSS

V_GS(th)

nA V_DS=0V,

=±20V

0.7 1.3

VDS=VGS, ID=250μA

110

105

mΩ VGS=4.5V, ID=2A

Drain-source on-resistance(note 1)

R_DS(ON)

mΩ

VGS=10V, ID=3A

Internal Gate Resistance

Forward transconductance(note 1)

Input capacitance

R_G

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

1.6

VDS=25V, ID=3A

290

V_{DS=25V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

5.4

6.3

6.8

4.2

2.5

0.7

1.3

VDD=30V,ID=1A,

RG=6.8Ω,VGS=4.5V

Turn-on rise time

Turn-off delay time

t_d(off)

Turn-off fall time

t_f

Q_g

Total gate charge

Q_gs

Q_gd

I_S

I_SM

V_SD

trr

VDS=30V,VGS=4.5V,ID=3A

Gate-source charge

Gate-drain charge

Diode forward current(Body Diode)

Pulsed Source Current(Body Diode)

Diode forward voltage (note 1)

Reverse Recovery Time

Reverse Recovery Charge

1.6

1.2

0.8

IS=1A , VGS=0V,Tj=25°C

TJ=25°C,VR=30V,IF=1.6A,

di/dt=100A/μs

Qrr

Note:1. Pulse test ; Pulse width ≤400µs, Duty cycle ≤ 2% .

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