5秒后页面跳转
IRLML2030TRPBF PDF预览

IRLML2030TRPBF

更新时间: 2024-11-24 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
10页 258K
描述
HEXFET Power MOSFET

IRLML2030TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MICRO-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.08Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:327800
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:Micro3 (SOT23)
Samacsys Released Date:2018-03-23 08:51:14Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):2.7 A最大漏极电流 (ID):2.2 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.3 W
最大脉冲漏极电流 (IDM):11 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLML2030TRPBF 数据手册

 浏览型号IRLML2030TRPBF的Datasheet PDF文件第2页浏览型号IRLML2030TRPBF的Datasheet PDF文件第3页浏览型号IRLML2030TRPBF的Datasheet PDF文件第4页浏览型号IRLML2030TRPBF的Datasheet PDF文件第5页浏览型号IRLML2030TRPBF的Datasheet PDF文件第6页浏览型号IRLML2030TRPBF的Datasheet PDF文件第7页 
PD - 97432  
IRLML2030TRPbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
G
1
VGS Max  
± 20  
RDS(on) max  
(@VGS = 10V)  
3
D
100  
154  
m
TM  
RDS(on) max  
(@VGS = 4.5V)  
2
S
Micro3 (SOT-23)  
m
IRLML2030TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Features  
Benefits  
Industry-standard pinout  
Multi-vendor compatibility  
Easier manufacturing  
Environmentally friendly  
Increased reliability  
Compatible with existing Surface Mount Techniques  
results in  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
30  
2.7  
2.2  
11  
Drain-Source Voltage  
VDS  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
1.3  
0.8  
0.01  
± 20  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
PD @TA = 25°C  
PD @TA = 70°C  
W
W/°C  
V
Gate-to-Source Voltage  
VGS  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
TJ, TSTG  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Ambient  
RθJA  
RθJA  
–––  
–––  
100  
99  
°C/W  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through „ are on page 10  
www.irf.com  
1
11/4/09  

IRLML2030TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRLML0030TRPBF INFINEON

类似代替

HEXFET Power MOSFET
MGSF1N03LT1G ONSEMI

功能相似

单 N 沟道小信号功率 MOSFET 30V,2.1A,100 mΩ
NTR4503NT1G ONSEMI

功能相似

Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

与IRLML2030TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRLML2060 INFINEON

获取价格

60V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装
IRLML2060PBF INFINEON

获取价格

Compatible with existing Surface Mount Techniques
IRLML2060PBF_15 INFINEON

获取价格

Compatible with existing Surface Mount Techniques
IRLML2060TR UMW

获取价格

种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时
IRLML2060TRPBF INFINEON

获取价格

HEXFET Power MOSFET
IRLML2244 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRLML2244PBF INFINEON

获取价格

Compatible with existing Surface Mount Techniques
IRLML2244PBF_15 INFINEON

获取价格

Compatible with existing Surface Mount Techniques
IRLML2244TR UMW

获取价格

种类:P-Channel;漏源电压(Vdss):-20V;持续漏极电流(Id)(在25°C
IRLML2244TRPBF TYSEMI

获取价格

HEXFETpower MOSFET RoHS compliant containing no lead, no bromide and no halogen