Datasheet > IRLML2246

IRLML2246

更新时间： 2024-06-27 12:13:11

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	751K
描述
SOT-23

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中文翻译

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数据手册

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IRLML2246 数据手册

IRLML2246

MOSFET (P-CHANNEL)

FEATURES

 VDS=-20V, ID=-2.6A, RDS(ON)<135mΩ@VGS=-4.5V

 Fast switching

 Ultra Low On-Resistance

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

Value

-20

Unit

Gate-source voltage

V_GS

±12

TA=25°C

-2.6

Continuous drain current

I_D

TA=70°C

-2.1

Pulsed drain current (Note 1)

IDM

-11

TA=25°C

1.3

Power dissipation

TA=70°C

Linear Derating Factor

0.8

0.01

100

W/°C

°C/W

°C

Thermal resistance from Junction to ambient

Storage and Junction temperature

R_θJA*

TJ,TSTG

-55 ~+150

*Surface mounted on 1 in square Cu board

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V^(BR)DSS

Drain-Source breakdown voltage

-20

-0.4

3.4

VGS=0V, ID=-250μA

-1

V_DS=-16V,

=0V

=0V,

Zero gate voltage drain current

I_DSS

μA

-150

±100

-1.1

135

236

Tj=125°C

Gate-body leakage current

Gate-threshold voltage (note 1)

I_GSS

V_GS(th)

nA V_DS=0V,

^GS

=±16V

VDS=VGS

ID=-10μA

157

mΩ VGS=-4.5V, ID=-2.6A

mΩ VGS=-2.5V, ID=-2.1A

Drain-source on-resistance(note 1)

R_DS(ON)

Internal Gate Resistance

Forward transconductance(note 1)

Input capacitance

R_G

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

VDS=-10V, ID=-2.6A

220

V_{DS=-16V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

5.3

7.7

VDD=-10V,ID=-1A,

RG=6.8Ω,VGS=-4.5V

Turn-on rise time

Turn-off delay time

t_d(off)

Turn-off fall time

t_f

Q_g

Total gate charge

2.9

0.52

1.2

Q_gs

Q_gd

I_S

I_SM

V_SD

trr

VDS=-10V,VGS=-4.5V,ID=-2.6A

Gate-source charge

Gate-drain charge

integral reverse

p-n junction diode.

Diode forward current(Body Diode)

Pulsed Source Current(Body Diode)

Diode forward voltage (note 1)

Reverse Recovery Time

Reverse Recovery Charge

-1.3

-11

-1.2

IS=-2.6A, VGS=0V,Tj=25°C

TJ=25°C,VR=-15V,IF=-2.6A,

di/dt=100A/μs

6.2

Qrr

9.3

Note:1. Pulse test ; Pulse width ≤400µs, Duty cycle ≤ 2% .

1 / 6

E-mail:hkt@heketai.com

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与IRLML2246相关器件

型号	品牌	获取价格	描述	数据表
IRLML2246PBF	INFINEON	获取价格	Compatible with existing Surface Mount Techniques
IRLML2246PBF_15	INFINEON	获取价格	Compatible with existing Surface Mount Techniques
IRLML2246PBF-1	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML2246PBF-1_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRLML2246TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C
IRLML2246TRPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRLML2246TRPBF	TYSEMI	获取价格	RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly
IRLML2402	TYSEMI	获取价格	Ultra Low On-Resistance N-Channel MOSFET Fast switching.
IRLML2402	INFINEON	获取价格	HEXFET Power MOSFET
IRLML2402	HC	获取价格	SOT-23

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