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IRLML2246TR PDF预览

IRLML2246TR

更新时间: 2024-10-15 17:15:31
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
8页 401K
描述
种类:P-Channel;漏源电压(Vdss):-20V;持续漏极电流(Id)(在25°C时):-2.6A;Vgs(th)(V):±12;漏源导通电阻:135mΩ@-4.5V

IRLML2246TR 数据手册

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R
UMW  
IRLML2246  
Features  
SOT23  
-20  
VDS (V) =  
V
l
ID= 2A  
RDS(ON)  
RDS(ON)  
l
l
l
135m  
236m  
(VGS = 4.5V)  
-
(VGS = 2.5V)  
-
l
l
l
Industry-standard pinout  
Compatible with existing Surface Mount Techniques  
RoHS compliant  
1. GATE  
2. SOURCE  
3. DRAIN  
Application(s)  
l
System/Load Switch  
Benefits  
l
Multi-vendor compatibility  
l
l
l
Easier manufacturing  
Environmentally friendly  
Increased reliability  
Absolute Maximum Ratings  
Symbol  
Parameter  
Units  
V
VDS  
-20  
-2.6  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-2.1  
A
-11  
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.80  
0.01  
W/°C  
V
VGS  
± 12  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RJA  
100  
Junction-to-Ambient  
°C/W  
RJA  
99  
Junction-to-Ambient (t<10s)  
Notes:  

‚
ƒ
Repetitive rating; pulse width limited by max. junction temperature.  
Pulse width 400μs; duty cycle 2%.  
Surface mounted on 1 in square Cu board.  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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