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IRLML2402  PDF预览

IRLML2402 

更新时间: 2024-11-26 17:15:35
品牌 Logo 应用领域
浩畅 - HC /
页数 文件大小 规格书
4页 1860K
描述
SOT-23  

IRLML2402  数据手册

 浏览型号IRLML2402 的Datasheet PDF文件第2页浏览型号IRLML2402 的Datasheet PDF文件第3页浏览型号IRLML2402 的Datasheet PDF文件第4页 
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.  
MOSFET  
SOT-23 Plastic-Encapsulate MOSFETS  
SOT-23  
Unit: mm  
+0.1  
-0.1  
N-Channel MOSFET  
IRLML2402  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
VDS (V) = 20V  
ID = 1.2 A( VGS = 4.5V)  
1
2
+0.1  
-0.1  
+0.05  
0.1  
-0.01  
0.95  
RDS(ON) 250mΩ (VGS = 4.5V)  
RDS(ON) 350mΩ (VGS = 2.7V)  
+0.1  
-0.1  
1.9  
D
1. Gate  
G
2. Source  
3. Drain  
S
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
20  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
±12  
1.2  
TA=25℃  
Continuous Drain Current  
ID  
A
0.95  
7.4  
TA=70℃  
Pulsed Drain Current  
Power Dissipation  
I
DM  
P
D
540  
mW  
mW/℃  
V/ns  
TA=25℃  
Linear Deraing Factor  
Peak Diode Recovery dv/dt  
4.3  
(Note.1)  
dv/dt  
5
Thermal Resistance.Junction- to-Ambient  
Junction Temperature  
R
thJA  
230  
/W  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
I
SD  
Note.1:  
浩畅半导体  
©2008  
RevKM ay2014  
www.szhaochang.cn  
1 of 5  

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