Datasheet > IRLML2246

IRLML2246

更新时间： 2024-11-22 14:56:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	202K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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数据手册

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IRLML2246 数据手册

PD - 97630A

IRLML2246TRPbF

HEXFET^®Power MOSFET

V_DS

-20

V_{GS Max}

±12

R_{DS(on) max}

(@V_GS= -4.5V)

135

236



R_{DS(on) max}

(@V_GS= -2.5V)

Micro3 (SOT-23)

IRLML2246TRPbF

Application(s)

 System/Load Switch

Features and Benefits

Features

Benefits

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Consumer qualification

results in Easier manufacturing

Environmentally friendly

Increased reliability



Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

-20

-2.6

-2.1

-11

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

Linear Derating Factor

0.80

0.01

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_JA

Junction-to-Ambient

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

03/09/12

12 3 4 5 6 7...11

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