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IRLML0100PBF-1_15 PDF预览

IRLML0100PBF-1_15

更新时间: 2024-02-12 15:27:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 209K
描述
Compatible with Existing Surface Mount Techniques

IRLML0100PBF-1_15 数据手册

 浏览型号IRLML0100PBF-1_15的Datasheet PDF文件第2页浏览型号IRLML0100PBF-1_15的Datasheet PDF文件第3页浏览型号IRLML0100PBF-1_15的Datasheet PDF文件第4页浏览型号IRLML0100PBF-1_15的Datasheet PDF文件第5页浏览型号IRLML0100PBF-1_15的Datasheet PDF文件第6页浏览型号IRLML0100PBF-1_15的Datasheet PDF文件第7页 
IRLML0100PbF-1  
HEXFET® Power MOSFET  
VDS  
100  
220  
2.5  
1.6  
V
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
G
S
1
2
m
Ω
nC  
A
3
D
ID  
(@TA = 25°C)  
TM  
Micro3 (SOT-23)  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro3 (SOT-23)  
Orderable Part Number  
Form  
Quantity  
IRLML0100TRPbF-1  
Tape and Reel  
3000  
IRLML0100TRPbF-1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
100  
Units  
V
Drain-Source Voltage  
VDS  
1.6  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
1.3  
7.0  
A
1.3  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
PD @TA = 25°C  
PD @TA = 70°C  
W
0.8  
0.01  
± 16  
W/°C  
V
Gate-to-Source Voltage  
VGS  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
TJ, TSTG  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Ambient  
RθJA  
RθJA  
–––  
–––  
100  
99  
°C/W  
Junction-to-Ambient (t<10s)  
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback  
October 27, 2014  

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