是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 21 weeks | 风险等级: | 0.96 |
雪崩能效等级(Eas): | 29 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 1.13 A | 最大漏极电流 (ID): | 1.13 A |
最大漏源导通电阻: | 0.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 9 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLM6402GPBF | INFINEON |
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HEXFETPower MOSFET | |
IRLML0030 | INFINEON |
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The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil | |
IRLML0030 | HOTTECH |
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SOT-23 | |
IRLML0030PBF | INFINEON |
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ADVANCED PROCESS TECHNOLOGY | |
IRLML0030PBF_15 | INFINEON |
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ADVANCED PROCESS TECHNOLOGY | |
IRLML0030PBF-1 | INFINEON |
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Industry-standard pinout SOT-23 Package | |
IRLML0030PBF-1_15 | INFINEON |
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Industry-standard pinout SOT-23 Package | |
IRLML0030TR | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
IRLML0030TRPBF | TYSEMI |
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HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losse | |
IRLML0030TRPBF | INFINEON |
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HEXFET Power MOSFET |