是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 6 weeks | 风险等级: | 5.35 |
雪崩能效等级(Eas): | 105 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 0.22 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLM120ATF_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM120ATF-Q | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRLM210 | FAIRCHILD |
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Advanced Power MOSFET | |
IRLM210A | FAIRCHILD |
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Advanced Power MOSFET | |
IRLM210ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM220A | FAIRCHILD |
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Advanced Power MOSFET | |
IRLM220ATF | FAIRCHILD |
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Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Me | |
IRLM220ATF | ONSEMI |
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功率 MOSFET,N 沟道,A-FET,200 V,1.13 A,800 mΩ,SOT- | |
IRLM6402GPBF | INFINEON |
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HEXFETPower MOSFET | |
IRLML0030 | INFINEON |
获取价格 |
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil |